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PRODUCT/SERVICE




X-BAND, GAN/SIC POWER TRANSISTOR: IGT1112M90

Source: Integra Technologies, Inc.

Integra Technologies offers the IGT1112M90 X-band, GaN/SiC power transistor
designed to meet the requirements of radar systems operating in the X-band.
Operating in the 10.8 – 11.8 GHz frequency range with under 150µs and 10% duty
cycle pulse conditions, the device supplies a minimum of 90 W of peak output
power, with an associated 9 dB of gain and 35% efficiency.

 * RELATED CONTENT FROM INTEGRA TECHNOLOGIES, INC.

 * X-Band, GaN/SiC Power Transistor: IGT1112M90 Datasheet

The IGT1112M90 operates from a 50 V supply voltage. For optimal thermal
efficiency, the transistor is housed in a metal-based package with an epoxy
sealed ceramic lid.

Additional features include:

 * GaN on SiC HEMT Technology
 * Output Power >90 W
 * Fully matched to 50 W Impedance at both Input and Output
 * High Efficiency - up to 43%
 * 100% RF Tested
 * RoHS and REACH Compliant

For additional specifications and operating parameters, download the datasheet.




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