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Get more RF Globalnet insight with our FREE newsletter. sign me up Log In or Subscribe Products RF Amplifiers Broadband Amplifiers Gain Block Amplifiers High Power Amplifiers Log Amplifiers Low Noise Amplifiers Millimeter-Wave Amplifiers MMIC Amplifiers Solid State Amplifiers Variable Gain Amplifiers Passive Components Attenuators Capacitors/Resistors Circulators/Isolators Couplers Diodes Diplexers/Duplexers Filters Inductors/Limiters Power Dividers/Combiners Switches Active Components Mixers/Modulators Multipliers Oscillators Phase Shifters Transistors Test and Measurement Analyzers Current Probes Generators/Sources Matrix Switches Meters Probes Sensors Synthesizers Tuners Semiconductors/ICs Diodes MMICs Thick and Thin Film Front-End Modules Cables/Connectors Adapters Cables Connectors Systems/Subsystems Receivers/Transmitters Transceivers Optoelectronics & Fiber Optics Materials/Packaging Absorbers Ceramics Crystals Laminates Antennas Antenna Kits Biconical Antennas Omni-Directional H-Field Rods Horn Monopole/Dipole Software 3D Modeling Antenna Design/Analysis EM Simulation Markets 5G Internet of Things (IoT) Military & Defense Medical RF Test And Measurement Satellite Automotive News and Community Latest Headlines Industry Events Career Development LinkedIn Twitter Suppliers A.H. Systems Analog Devices AR AR Modular RF Communications and Power Industries (CPI), BMD dB Control Corp. JFW Industries Knowles Precision Devices DLI KRYTAR Mercury Systems, Inc. Qorvo Remcom Rohde & Schwarz Skyworks Solutions, Inc. Wireless Telecom Group IMS2022 PRODUCT/SERVICE X-BAND, GAN/SIC POWER TRANSISTOR: IGT1112M90 Source: Integra Technologies, Inc. Integra Technologies offers the IGT1112M90 X-band, GaN/SiC power transistor designed to meet the requirements of radar systems operating in the X-band. Operating in the 10.8 – 11.8 GHz frequency range with under 150µs and 10% duty cycle pulse conditions, the device supplies a minimum of 90 W of peak output power, with an associated 9 dB of gain and 35% efficiency. * RELATED CONTENT FROM INTEGRA TECHNOLOGIES, INC. * X-Band, GaN/SiC Power Transistor: IGT1112M90 Datasheet The IGT1112M90 operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy sealed ceramic lid. Additional features include: * GaN on SiC HEMT Technology * Output Power >90 W * Fully matched to 50 W Impedance at both Input and Output * High Efficiency - up to 43% * 100% RF Tested * RoHS and REACH Compliant For additional specifications and operating parameters, download the datasheet. NEWSLETTER SIGNUP * Get the latest RF/microwave industry news, insights, and analysis delivered to your inbox. I agree to the Terms. I agree to the Privacy Statement. SIGN ME UP YOU MAY ALSO LIKE... * X-BAND, GAN/SIC POWER TRANSISTOR: IGT1112M90 DATASHEET The IGT1112M90 X-band, GaN/SiC power transistor designed to meet the requirements of radar systems operating in the X-band. Operating in the 10.8 – 11.8 GHz frequency range with under... * 5.7 – 7 GHZ, 50 WATT GAN POWER AMPLIFIER: QPA1017D DATASHEET The QPA1017D is Qorvo’s MMIC power amplifier operating from 5.7 – 7.0 GHz for C-band radar and satellite communications applications. Fabricated on Qorvo’s production 0.15 um GaN on... * GAN POWER AMPLIFIERS DELIVER 2.5 W OF POWER AT E-BAND AND W-BAND AT 20% PAE Millitech recently announced the release of a new Gallium Nitride (GaN) based power amplifiers with exceptional output power and power-added efficiency (PAE) at E-Band and W-Band. * RICHARDSON RFPD INTRODUCES NEW X-BAND, 100 W GAN POWER AMPLIFIER FROM QORVO Richardson RFPD, Inc. announced recently the availability and full design support capabilities for a new X-band GaN power amplifier from Qorvo. * MICROSEMI ANNOUNCES POWER SOLUTION MODULES FOR L-BAND RADAR APPLICATIONS Microsemi Corporation has announced a new series of state-of-the-art power solution modules for high-power L-band pulsed radar applications * RF POWER TRANSISTOR 200 W 50 VOLT 30 MHZ: HF50-200 * COMPACT 250 W DUAL-STAGE 2.4 GHZ MODULE WITH 50 OHM INPUT/OUTPUTS EASES INTEGRATION COMPLEXITY * RF POWER TRANSISTOR * 5 – 6 GHZ, 60 WATT GAN POWER AMPLIFIER: QPA2308 DATASHEET * NEW PLUG-AND-PLAY POWER SOLUTION MODULES FOR L- AND S-BAND PULSED RADAR APPLICATIONS * MICROWAVE POWER AMPLIFIER * RICHARDSON RFPD INTRODUCES TWO NEW X-BAND GAN POWER AMPLIFIERS FROM QORVO This website uses cookies to ensure you get the best experience on our website. Learn more Got it! EXLPORE RF GLOBALNET * From The Editor * Recent Newsletters * Latest Headlines CONTACT US * Contact RF Globalnet ADVERTISE WITH US * Request A Demo WRITE FOR US * Guest Article Submission Guidelines Copyright © 1996-2022 VertMarkets, Inc. All Rights Reserved. Terms of Use. Privacy Statement. Subscriber Request Form. Don't sell my information