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IMS2022



NEWS | FEBRUARY 22, 2022




AMPLEON BOOSTS GAN-ON-SIC HEMT TRANSISTOR PERFORMANCE WITH THE RELEASE OF
GENERATION 3



Ampleon today announced the release of two new broadband GaN-on-SiC HEMT
transistors in the power classes of 30 Watts CLF3H0060(S)-30, 100 Watts
CLF3H0035(S)-100. These high linearity devices are the initial products from our
Generation 3 GaN-SiC HEMT process recently qualified and released to production.

The devices offer broadband high linearity features under low bias settings to
raise the performance levels for broadband linearity (under -32dBc third-order
intermodulation products at 5dB, and less than -42dBc at 8dB back-off from
saturated power over a 2:1 bandwidth). Broadband linearity is vital for
frequency-agile radios deployed in today’s defense electronics for handling
multi-mode communication waveforms (from FM through high-order QAM signals) with
simultaneous application of countermeasure channels. These demanding
applications require transistors with inherently better broadband linearity.
Based on market feedback, the Ampleon Generation 3 GaN-on-SiC HEMT transistors
meet these extended broadband linearity requirements.

In addition, the Generation 3 transistors are housed in a thermally enhanced
package, which enables reliable operation and offers an extremely rugged VSWR
withstand capability of up to 15:1 for a 30 Watt device. The ruggedness extends
to Class A operation, common to instrumentation applications with saturated gate
conditions while maintaining linearity over a wide dynamic range at extended
frequency ranges. Ampleon’s Generation- 3 GaN-on-SiC HEMT transistors set a new
standard for high linearity GaN technology for broadband applications while
maintaining excellent thermal and ruggedness features.

Further information on Ampleon’s latest 50V Generation 3, GaN-on-SiC RF power
transistors can be found here: CLF3H0060(S)-30, CLF3H0035(S)-100.

These transistors are available directly from Ampleon, or authorized
distributors RFMW and Digi-Key. Large-signal models in ADS and MWO are available
from Ampleon’s website.

About Ampleon
Created in 2015, Ampleon is shaped by more than 50 years of RF Power leadership.
The company envisions to make the world a better place through innovation in
high-frequency applications based on advanced LDMOS and GaN technologies.
Ampleon has more than 1,600 employees worldwide, dedicated to enabling their
customers to be successful with RF Power products through close cooperation and
partnership, innovation, and excellent execution. Its innovative, yet consistent
portfolio offers products and solutions for 4G LTE and 5G NR infrastructure,
industrial, scientific, medical, broadcast, aerospace, and defense applications.
For more information, visit www.ampleon.com.



Source: Ampleon

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