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 * Cited by (2)


CERAMICS INTERNATIONAL

Volume 44, Issue 5, 1 April 2018, Pages 5799-5802


SHORT COMMUNICATION
BLOW-BUBBLE TO PRODUCE CERAMIC ULTRA-THIN FILMS

Author links open overlay panelHaitian Zhang, Muhammad Murtaza, Wenjie Si, Hui
Wu
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https://doi.org/10.1016/j.ceramint.2017.12.126Get rights and content




ABSTRACT

Ceramic ultra-thin film materials have attracted much attention because of their
unique performance compared to the bulk materials and their vital applications
in electronic devices and catalysts. An easy, effective and facile method to
fabricate high quality ceramic nano membranes will significantly stimulate their
practical applications. Herein, we report a new “Blow-bubble” process to produce
large area freestanding ultra-thin ceramic material. We successfully used a
blow-bubble method to obtain large area freestanding ultra-thin ZnO film after
thermal process, and this method can also be used to other materials like TiO2.
This synthesizing process relies on sol-gel method and surface tension. In
summary, this work demonstrates a facile, economic and effective method to
fabricate large area freestanding ultra-thin ZnO film. The photoconductivity of
the ZnO film was also tested.


INTRODUCTION

Ceramic ultra-thin films have been paid much attention due to their unique
optical, electrical, photoelectrical properties and wide potential applications
in electronics and catalysis. For example, Yasutaka Takahashi et al. reported
that the thickness of the ZnO film have influence on the photoresponse
properties. The thinner film has better photoresponse properties than thicker
one. Also, as the thickness of the ZnO film decrease, the conductivity of the
ZnO film also decrease rapidly, which contributes to the better photoconductive
properties of the ZnO thinner film compared to the subsequently thicker ZnO film
[1]. For the ultra-thin ZnO film, the photoelectronic properties are often
described by surface-mediated phenomena due to great surface-volume rate [2].
When a semiconductor material like ZnO is exposed to the UV light which has an
energy higher than the band gap energy of the material, it could cause the
formation of the electron-hole pairs and the electron conductivity of the
material increases. when the light is turned off, the conductivity of the
material decreases.

ZnO is a wide band gap (3.3 eV) semiconductor material. It is a direct band gap
material, different from silicon, which gives it additional advantage on gas
sensors and UV light detective [3], [4], [5], [6], [7]. ZnO has a hexagonal
wurtzite crystal structure with a large exciton binding energy (60 meV) which is
larger than other direct band gap semiconductor materials like GaN (25 meV) [3].
This makes it possible to produce UV light detector with low threshold of light.
S.S. shinde et al. successfully synthesized ZnO UV detectors by using ZnO as the
buffer film [8]. Chih-hung Lin et al. fabricated a transparent UV detective
device using ZnO nanowire [9]. The chemical and thermal stability give ZnO
massive potential in UV light detector in the flexible mechanically robust
electronics field [10]. Due to the presence of zinc interstitials and oxygen
vacancies etc, the undoped ZnO, often has n-type conduction [11], [12], [13]. By
doping the ZnO material, the optical property will be significantly enhanced. S
P Ghosh et al. successfully made a Cu-doped ZnO material by hydrothermal
processing [14]. By using the PLD technique, P.S. Shewale et al. made Cu-doped
ZnO film grown on SiO2 substrates. The dark current of the UV light detective
test was lowered as compared to the undoped film [15]. For all the materials,
the synthesizing method is a key factor for the potential of their applications.
Particularly, for the material synthesizing method, an easy, efficient, and
low-cost process can significantly stimulate their practical applications. There
are many well-known and common strategies of producing ZnO film such as chemical
vapor deposition (CVD), mental oxide chemical vapor deposition (MOCVD),
hydrothermal, electrochemical deposition and molecular beam epitaxy (MBE). S.P.
Chang et al. made ZnO photoconductive sensors through epitaxially process [16].
Among these methods, MBE and MOCVD are very hard to apply for the large-scale
application due to their expensive experimental equipment. It may take a long
time to obtain a large-area film material, and it is hard to achieve a
freestanding film material directly by using CVD method. Hydrothermal method is
an easy and efficient way to produce nanoscale materials, but it is difficult to
produce large area film material. Moreover, the high temperature and high
pressure during the hydrothermal reaction make it easy to cause safety problems.

Herein, we report a new blow-bubble process to produce ceramic ultra-thin films
based on sol-gel method and surface tension. We successfully synthesized
freestanding large-area ultra-thin ZnO film through this easy, effective and
low-cost process. Besides the thermal process, all the steps can be carried out
at room temperature and the entire experiment are carried out in normal
pressure.


SECTION SNIPPETS


RESULTS

The film synthesizing method is shown in Fig. 1 (see Section 4). ZnO film with a
thickness of ~ 60 nm and an area of several millimeters was synthesized. The
scanning electron microscopy (SEM) confirmed the film structure. Fig. 2a shows
the photograph of the precursor bubble and Fig. 2b shows the dried film before
heating process. The film is transparent before the heating process, and the
wrinkles on the film are caused by the shrinking of the polymer during the
drying process. The thickness of


DISCUSSION

During the thermal process, the polymer contract rapidly and was burnt
ultimately. As a result, the film contract rapidly after the thermal process
because it contains large quantity of polymer. As shown in Fig. 2c, the obtained
ZnO film is in the area marked by the black circle, the film is freestanding and
has an area around 1 cm * 1 cm. The film is transparent and the pattern in Fig.
2c is below the film. The SEM image shows that the film has a continuous film
structure. The surface of the


MATERIALS AND METHODS

0.1 g zinc acetate-2-hydrate [Zn(CH3COO)2•2H2O] (Beijing Yili Fine Chemicals
Co., Ltd), 0.5 g polyvinylpyrrolidone (Mw ~ 1300000, Alfa Aesar) and 5 μl amine
oxide partially fluorinated surfactant (Capstone® FS-51, Shanghai Kingpont
Industrial Co., Ltd) were added into the bottle with 2 ml ethyl alcohol and 4 ml
deionized water to form precursor by magnetic stirring. The precursor was then
placed at room temperature for 1 day to make it free of bubbles caused by
magnetic stirring which may affect the


CONCLUSIONS

We have successfully produced large area continuous structure ZnO film by
blow-bubble method. This is a facile, effective and low-cost method to fabricate
ultra-thin ZnO film and it is also applicable to other ceramics like TiO2, Ag2O
etc. The photoresponse of the film was tested and the result indicated that the
film can be used to detect UV light. Compared to the existing film-producing
methods, our results indicate that this blow-bubble method may be an easier and
economical method to


ACKNOWLEDGMENTS

This work was supported by the National Basic Research of China (Grants
2015CB932500), National Natural Science Foundations of China (Grant 51661135025
and 51522207).


CONFLICTS OF INTEREST

The authors declare no conflicts of interest.

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REFERENCES (16)

 * Q.A. Xu et al.
   
   
   ZNO THIN FILM PHOTOCONDUCTIVE ULTRAVIOLET DETECTOR WITH FAST PHOTORESPONSE
   
   
   J. CRYST. GROWTH
   
   (2006)
 * S. Liang et al.
   
   
   ZNO SCHOTTKY ULTRAVIOLET PHOTODETECTORS
   
   
   J. CRYST. GROWTH
   
   (2001)
 * V.L. Patil et al.
   
   
   FABRICATION OF NANOSTRUCTURED ZNO THIN FILMS BASED NO 2 GAS SENSOR VIA SILAR
   TECHNIQUE
   
   
   SENS. ACTUATORS B-CHEM.
   
   (2017)
 * J. Wang et al.
   
   
   COST-EFFECTIVE LARGE-SCALE SYNTHESIS OF OXYGEN-DEFECTIVE ZNO PHOTOCATALYST
   WITH SUPERIOR ACTIVITIES UNDER UV AND VISIBLE LIGHT
   
   
   CERAM. INT.
   
   (2017)
 * S. Shinde et al.
   
   
   FABRICATION AND PERFORMANCE OF N-DOPED ZNO UV PHOTOCONDUCTIVE DETECTOR
   
   
   J. ALLOY. COMPD.
   
   (2012)
 * S. Shinde et al.
   
   
   FAST RESPONSE ULTRAVIOLET GA-DOPED ZNO BASED PHOTOCONDUCTIVE DETECTOR
   
   
   MATER. RES. BULL.
   
   (2011)
 * J. Mass et al.
   
   
   EFFECT OF HIGH SUBSTRATE TEMPERATURE ON AL-DOPED ZNO THIN FILMS GROWN BY
   PULSED LASER DEPOSITION
   
   
   MATER. SCI. ENG. B-SOLID
   
   (2003)
 * P. Shewale et al.
   
   
   UV PHOTODETECTION PROPERTIES OF PULSED LASER DEPOSITED CU-DOPED ZNO THIN FILM
   
   
   CERAM. INT.
   
   (2017)

There are more references available in the full text version of this article.


CITED BY (2)


 * PREPARATION AND CHARACTERIZATION OF MULTILAYER COATINGS ON TOOL STEEL
   
   2019, Ceramics International
   Citation Excerpt :
   
   The current state of knowledge about the sol-gel technique is quite broad in
   relation to the basic aspects of this process [15]. In fact, there is a
   strong impetus in technological research motivated by the applications of the
   materials prepared through the sol-gel route [16]. However, there are certain
   basic aspects of the research and development of these coatings that need to
   be improved on.
   
   Show abstract
   
   This work is focused on the design and preparation of ZrO2-, TiN- and
   TiAlN-based multilayer using a combination of different strategies. Films
   have been deposited onto stainless and tool steels with the aim of
   characterizing the coatings as well as analyzing their behavior in order to
   optimize service capacity, extend working life and minimize production costs.
   The results of the study revealed compatibility among the techniques through
   the optimal combination of layers in terms of thickness and densification
   thus leading to an optimization of the properties of multilayer coatings.


 * REPLACEMENT REACTION-ASSISTED SYNTHESIS OF SILVER NANOPARTICLES BY JET FOR
   CONDUCTIVE INK
   
   2020, Nanotechnology
   
   


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