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Journals & Magazines >IEEE Journal of Quantum Elect... >Volume: 58 Issue: 3
DEAD TIME DURATION AND ACTIVE RESET INFLUENCE ON THE AFTERPULSE PROBABILITY OF
INGAAS/INP SINGLE-PHOTON AVALANCHE DIODES
Publisher: IEEE
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Anton V. Losev; Vladimir V. Zavodilenko; Andrey A. Koziy; Alexandr A. Filyaev;
Kristina I. Khomyakova; Yury V. Kurochkin; Alexander A. Gorbatsevich
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Abstract
Document Sections
* I.
Introduction
* II.
Common (Standard) Afterpulse Models
* III.
Custom Afterpulse Models
* IV.
Influence of the Active Reset on the Counting Statistics
* V.
Afterpulse Measurement Approach
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Impact Statement:The research object of this work is InGaAs/InP sine-gated SPAD.
As a result of comparison of SPDs based on InGaAs/InP SPADs (with latching time
(LT) and with latching tim...View more
Abstract:We have performed a detailed study of the dependence of afterpulse
probability in InGaAs/InP sine-gated SPAD on the dead time and the existing
approach for its implementa...View more
Metadata
Impact Statement:
The research object of this work is InGaAs/InP sine-gated SPAD. As a result of
comparison of SPDs based on InGaAs/InP SPADs (with latching time (LT) and with
latching time and active reset (LT + AR)), a circuitry solution with an active
reset module was obtained, which makes it possible to significantly reduce
afterpulse probability, even without the introduction of dead time. However,
with extensive dead time and low afterpulse probabilities, the differences
between the two schemes are relatively insignificant. The rejection of the
active reset module will make it possible to simplify the detector scheme, which
despite the increase in the probability of the afterpulse, will significantly
simplify the development of SPDs for applications in which such parameters are
acceptable. We also present the measurement technique and a probabilistic model
for estimating the afterpulse based on the recursive nature of this effect. It
will allow us to obtain valid internal afterpulsing parameters.
Abstract:
We have performed a detailed study of the dependence of afterpulse probability
in InGaAs/InP sine-gated SPAD on the dead time and the existing approach for its
implementation. We demonstrated an electrical scheme combining sinusoidal gating
and active reset. We have shown when such solutions are beneficial from the key
distribution point of view, and enough to use a simple scheme with a snatching
comparator. We have also proposed a precise method for measuring the afterpulse
and presented a model describing the non-markovian dynamic of this effect. We
have demonstrated that our afterpulsing measurement approach makes these
measurements less dependent on the parameters of the flow of the diode and the
laser pulses’ power changes, in contrast to the other methods considered in this
paper.
Published in: IEEE Journal of Quantum Electronics ( Volume: 58, Issue: 3, June
2022)
Article Sequence Number: 4500111
Date of Publication: 02 May 2022
ISSN Information:
INSPEC Accession Number: 21816574
DOI: 10.1109/JQE.2022.3171671
Publisher: IEEE
Contents
--------------------------------------------------------------------------------
I. INTRODUCTION
Detectors based on superconducting nanowires (SNSPD) [1] and single photon
avalanche diodes (SPAD) [2] have proven themselves in the best way as
single-photon detectors (SPDs). Each of the implementations has both its
advantages and disadvantages. SNSPD has high a probability of photon detection
and a low noise level, but it is large and quite expensive due to usage of a
helium cryostat [3]. SPAD-based SPDs have small size and low cost, but the
probability of detection is relatively low, and noise characteristics are high.
Both first and second types of SPD have found their application in quantum key
distribution (QKD) [4], [5]. It is advisable to use SNSPD for key distribution
over long distances, both over fiber and in open space. SNSPD based QKD was able
to demonstrate key distribution distance records [6]. It is advisable to use
SPAD-based SPD in small-sized industrial installations [7] that distribute the
key within one city or even one building, since the loss of photons in the line
is minimal and the key generation rate is relatively high.
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Arrays of III-V semiconductor Geiger-mode avalanche photodiodes
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003.
LEOS 2003.
Published: 2003
Photon-counting receiver in near-infra-red region: use of GaInAs avalanche
photodiode
Electronics Letters
Published: 1989
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